Semiconductor device including memory structure and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming a metallization layer over a substrate, the metallization layer including a first dielectric layer, and two metal lines disposed in the first dielectric layer and spaced apart from one another, the metallization layer having a first region and a second region, one of the two metal lines being disposed in the first region and the other one of the two metal lines being disposed in the second region;
• forming a memory element disposed over and electrically connected to the one of the two metal lines;
• forming a cap to laterally cover the memory element;
• forming a protective feature on the cap so as to cover a top surface of the memory element;
• forming a second dielectric layer on the protective feature and the cap opposite to the first dielectric layer;
• and
• forming a first contact via to penetrate the second dielectric layer and to terminate at the protective feature, so that the first contact via is electrically connected to the memory element through the protective feature.

A semiconductor device, comprising:

• a substrate;
• a metallization layer disposed over the substrate, and including a first dielectric layer and a metal line disposed in the first dielectric layer;
• a memory element disposed over and electrically connected to the metal line;
• a cap laterally covering the memory element;
• a protective feature disposed on the cap and covering a top surface of the memory element;
• a second dielectric layer disposed on the cap and the protective feature opposite to the first dielectric layer;
• and
• a contact via penetrating the second dielectric layer and disposed on the protective feature, the contact via being electrically connected to the memory element through the protective feature.