H10N 50/00
Galvanomagnetic devices
Official title: Galvanomagnetic devices (Hall-effect devices H10N52/00; integrated devices or assemblies of multiple devices H10N59/00)
H10N50/00 (Galvanomagnetic devices) appears on 8,959 US grants and 10,077 published applications in this corpus.
Search patents in H10N- Granted patents
- 8,959
- Published applications
- 10,077
- Assignees
- 883
- Inventors
- 7,415
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 6 | 0 |
| 1982 | 1 | 0 |
| 1983 | 5 | 0 |
| 1984 | 6 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 13 | 0 |
| 1990 | 8 | 0 |
| 1991 | 12 | 0 |
| 1992 | 6 | 0 |
| 1993 | 12 | 0 |
| 1994 | 14 | 0 |
| 1995 | 22 | 0 |
| 1996 | 37 | 0 |
| 1997 | 36 | 0 |
| 1998 | 48 | 0 |
| 1999 | 50 | 0 |
| 2000 | 55 | 0 |
| 2001 | 52 | 28 |
| 2002 | 64 | 103 |
| 2003 | 79 | 98 |
| 2004 | 134 | 211 |
| 2005 | 152 | 242 |
| 2006 | 159 | 243 |
| 2007 | 165 | 223 |
| 2008 | 139 | 225 |
| 2009 | 167 | 238 |
| 2010 | 185 | 269 |
| 2011 | 238 | 266 |
| 2012 | 258 | 339 |
| 2013 | 332 | 369 |
| 2014 | 401 | 505 |
| 2015 | 443 | 464 |
| 2016 | 488 | 555 |
| 2017 | 537 | 569 |
| 2018 | 472 | 543 |
| 2019 | 668 | 712 |
| 2020 | 682 | 822 |
| 2021 | 592 | 657 |
| 2022 | 509 | 573 |
| 2023 | 461 | 584 |
| 2024 | 482 | 475 |
| 2025 | 483 | 452 |
| 2026 | 259 | 312 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films6 Oct 2026US 12,757,639 B2International Business Machines Corporation
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Optical detection device and signal processing method29 Sep 2026US 12,748,166 B2TDK Corporation
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
- Semiconductor quantum device8 Oct 2026US 2026/0313976 A1Teikyo University
- Magnetic tunnel junctions and methods of forming the same8 Oct 2026US 2026/0314266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- In situ and tunable deposition of a film1 Oct 2026US 2026/0297727 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Combinatorial synthesis of novel materials365US 5,985,356 ASymyx Technologies, Inc. · 1999
- Magnetic tunnel junctions with controlled magnetic response321US 5,650,958 AInternational Business Machines Corporation · 1997
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Waferless auto conditioning284US 8,784,676 B2Lam Research Corporation · 2014
- Alignment of MTJ stack to conductive lines in the absence of topography273US 7,223,612 B2Infineon Technologies AG · 2007