H10N 50/80
Constructional details
H10N50/80 (Constructional details) appears on 5,417 US grants and 6,283 published applications in this corpus.
Search patents in H10N- Granted patents
- 5,417
- Published applications
- 6,283
- Assignees
- 572
- Inventors
- 4,651
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 6 | 0 |
| 1994 | 9 | 0 |
| 1995 | 11 | 0 |
| 1996 | 24 | 0 |
| 1997 | 16 | 0 |
| 1998 | 25 | 0 |
| 1999 | 21 | 0 |
| 2000 | 12 | 0 |
| 2001 | 14 | 4 |
| 2002 | 13 | 11 |
| 2003 | 8 | 12 |
| 2004 | 13 | 26 |
| 2005 | 14 | 26 |
| 2006 | 17 | 36 |
| 2007 | 14 | 43 |
| 2008 | 16 | 39 |
| 2009 | 30 | 52 |
| 2010 | 31 | 58 |
| 2011 | 48 | 70 |
| 2012 | 58 | 130 |
| 2013 | 107 | 166 |
| 2014 | 187 | 293 |
| 2015 | 261 | 318 |
| 2016 | 328 | 394 |
| 2017 | 372 | 434 |
| 2018 | 359 | 399 |
| 2019 | 497 | 587 |
| 2020 | 569 | 696 |
| 2021 | 496 | 562 |
| 2022 | 428 | 487 |
| 2023 | 399 | 486 |
| 2024 | 402 | 375 |
| 2025 | 389 | 344 |
| 2026 | 205 | 235 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films6 Oct 2026US 12,757,639 B2International Business Machines Corporation
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Optical detection device and signal processing method29 Sep 2026US 12,748,166 B2TDK Corporation
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Magnetoresistance change element and magnetic array1 Oct 2026US 2026/0304784 A1TDK Corporation
- Detection architecture for a probabilistic-bit spintronic device1 Oct 2026US 2026/0305179 A1
- Magnetic domain wall motion element and magnetic array1 Oct 2026US 2026/0305180 A1TDK Corporation
- Semiconductor layout pattern with offset metal layer and manufacturing method thereof1 Oct 2026US 2026/0305181 A1United Microelectronics Corp.
Most cited
By later US patents
- Combinatorial synthesis of novel materials365US 5,985,356 ASymyx Technologies, Inc. · 1999
- Method of manufacturing a magnetoresistive-based device248US 8,747,680 B1Everspin Technologies, Inc. · 2014
- Giant magnetoresistive cobalt oxide compounds218US 5,776,359 ASymyx Technologies, Inc. · 1998
- Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor215US 5,583,725 AInternational Business Machines Corporation · 1996
- Magnetoresistive sensor based on the spin valve effect201US 5,159,513 AInternational Business Machines Corporation · 1992