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US 2026/0304784 A1Published application
Magnetoresistance change element and magnetic array
AssigneeTDK Corporation
InventorKeita SUDA
Life of this patent
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Abstract
This magnetoresistance change element includes a spin-orbit torque wiring and a laminate. The laminate has a first ferromagnetic layer. The spin-orbit torque wiring and the first ferromagnetic layer form a Schottky junction.
Claims12
A magnetoresistance change element comprising:
- a spin-orbit torque wiring;
- and
- a laminate,
- wherein the laminate has a first ferromagnetic layer, and
- the spin-orbit torque wiring and the first ferromagnetic layer form a Schottky junction.
2 more elements
Dependencies are inferred from the claim text.