H10N 50/85
Materials of the active region
H10N50/85 (Materials of the active region) appears on 3,346 US grants and 3,903 published applications in this corpus.
Search patents in H10N- Granted patents
- 3,346
- Published applications
- 3,903
- Assignees
- 449
- Inventors
- 3,358
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 8 | 0 |
| 1995 | 11 | 0 |
| 1996 | 23 | 0 |
| 1997 | 16 | 0 |
| 1998 | 25 | 0 |
| 1999 | 20 | 0 |
| 2000 | 12 | 0 |
| 2001 | 14 | 4 |
| 2002 | 13 | 11 |
| 2003 | 8 | 11 |
| 2004 | 13 | 26 |
| 2005 | 14 | 25 |
| 2006 | 16 | 35 |
| 2007 | 14 | 40 |
| 2008 | 15 | 38 |
| 2009 | 29 | 46 |
| 2010 | 29 | 42 |
| 2011 | 44 | 55 |
| 2012 | 51 | 96 |
| 2013 | 73 | 87 |
| 2014 | 103 | 141 |
| 2015 | 133 | 174 |
| 2016 | 199 | 226 |
| 2017 | 202 | 275 |
| 2018 | 212 | 269 |
| 2019 | 313 | 398 |
| 2020 | 353 | 446 |
| 2021 | 312 | 327 |
| 2022 | 270 | 285 |
| 2023 | 239 | 278 |
| 2024 | 240 | 190 |
| 2025 | 199 | 205 |
| 2026 | 107 | 173 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films6 Oct 2026US 12,757,639 B2International Business Machines Corporation
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Optical detection device and signal processing method29 Sep 2026US 12,748,166 B2TDK Corporation
- Magnetic tunnel junction stack and method for manufacturing the same22 Sep 2026US 12,745,569 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Magnetoresistance change element and magnetic array1 Oct 2026US 2026/0304784 A1TDK Corporation
- Magnetic random access memory with hybrid free layer1 Oct 2026US 2026/0305182 A1Samsung Electronics Co., Ltd.
- Memory device24 Sep 2026US 2026/0293151 A1Kioxia Corporation
- Magnetic memory device24 Sep 2026US 2026/0293152 A1Kioxia Corporation
Most cited
By later US patents
- Combinatorial synthesis of novel materials365US 5,985,356 ASymyx Technologies, Inc. · 1999
- Giant magnetoresistive cobalt oxide compounds218US 5,776,359 ASymyx Technologies, Inc. · 1998
- Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor215US 5,583,725 AInternational Business Machines Corporation · 1996
- Magnetoresistive sensor based on the spin valve effect201US 5,159,513 AInternational Business Machines Corporation · 1992
- Magnetoresistive read sensor including a carbon barrier layer and method for making same182US 6,330,137 B1Read-Rite Corporation · 2001