Magnetic random access memory with hybrid free layer
AssigneeSamsung Electronics Co., Ltd.
InventorsRoman CHEPULSKYY, Dmytro APALKOV, Jaewoo JEONG, FNU IKHTIAR
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Abstract
A magnetic random access memory (MRAM) is provided. The MRAM includes: a first layer; a second layer; and a first free layer (FL) disposed between the first layer and the second layer, wherein the first FL includes an Mn-based alloy, and wherein a first portion of the first FL adjacent to the first layer or adjacent to the second layer has an fcc-crystal phase, and a second portion of the first FL adjacent to the first layer or adjacent to the second layer has a bcc-crystal phase.
Claims18
A magnetic random access memory (MRAM) comprising:
- a first layer;
- a second layer;
- and
- a first free layer (FL) disposed between the first layer and the second layer, wherein the first FL includes an Mn-based alloy, and
- wherein a first portion of the first FL adjacent to the first layer or adjacent to the second layer has an fcc-crystal phase, and a second portion of the first FL adjacent to the first layer or adjacent to the second layer has a bcc-crystal phase.
A system comprising:
- a magnetic random access memory (MRAM) including:
- a first layer;
- a second layer;
- and
- a free layer (FL) disposed between the first layer and the second layer, wherein the FL includes an Mn-based alloy, and
- wherein a first portion of the FL adjacent to the first layer or adjacent the second layer has an fcc-crystal phase, and a second portion of the FL adjacent to the first layer or adjacent to the second layer has a bcc-crystal phase.
A method of fabricating a magnetic random access memory (MRAM) device, comprising:
- forming a first layer;
- forming a second layer;
- and
- forming a free layer (FL) between the first layer and the second layer, wherein the FL includes an Mn-based alloy, and
- wherein a first portion of the FL adjacent to the first layer or adjacent to the second layer has an fcc-phase, and a second portion of the FL adjacent to the first layer or adjacent to the second layer has a bcc-phase.
Dependencies are inferred from the claim text.