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US 2026/0293151 A1Published application
Memory device
AssigneesKioxia Corporation, SK hynix Inc.
InventorsHyungjun CHO, Kenichi YOSHINO, Hyung-Woo AHN, Takuya SHIMANO, Shin TAKANO, Jeongmyeong KIM
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Abstract
According to one embodiment, a memory device includes: a switching element; and a variable resistance element, wherein the switching element includes: a first portion; and a second portion provided on a side face of the first portion, the first portion includes silicon (Si), a density of silicon in the first portion is higher than that of silicon oxide (SiO2), and the second portion includes an element having a higher electronegativity than arsenic (As).
Claims17
A memory device comprising:
- a switching element;
- and
- a variable resistance element,
- wherein the switching element includes:
- a first portion;
- and
- a second portion provided on a side face of the first portion,
- the first portion includes silicon (Si),
- a density of silicon in the first portion is higher than that of silicon oxide (SiO2), and
- the second portion includes an element having a higher electronegativity than arsenic (As).
7 more elements
Dependencies are inferred from the claim text.