In situ and tunable deposition of a film
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hsi Wang, Yen-Yu Chen, Jen-Hao Chien
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Abstract
A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.
Claims20
A physical vapor deposition (PVD) system, comprising:
- a chamber body;
- a first PVD target and a second PVD target, the first PVD target containing an alloy of a first element and a second element, and a second element with an initial second element concentration of the second element, and the second PVD target being a second element PVD target consisting of the second element;
- an X-ray photoelectron spectroscopy (XPS) instrument configured to monitor a second element concentration of a film deposited on a substrate disposed, using the first PVD target and the second PVD target simultaneous, in the chamber body;
- and
- a controller configured to determine parameters of the PVD system based on a target second element concentration that is larger than the initial second element concentration, wherein the controller is configured to continuously tune the second element concentration of the film by adjusting the parameters of the PVD system when a difference between the second element concentration of the film and the target second element concentration is equal to or greater than a threshold.
A physical vapor deposition (PVD) system, comprising:
- a chamber body;
- a first PVD target containing an alloy of a first element, a second element, and a third element with an initial third element concentration;
- a second PVD target being a third element PVD target consisting of the third element;
- an X-ray photoelectron spectroscopy (XPS) instrument configured to monitor a third element concentration of a film deposited on a substrate disposed, using the first PVD target and the second PVD target simultaneous, in the chamber body;
- and
- a controller configured to determine parameters of the PVD system based on a target third element concentration that is larger than the initial third element concentration, wherein the controller is configured to continuously tune the third element concentration of the film by adjusting the parameters of the PVD system when a difference between the third element concentration of the film and the target third element concentration is equal to or greater than a threshold.
A physical vapor deposition (PVD) system, comprising:
- a chamber body;
- a first PVD target containing an alloy of a first element, a second element, and a third element with an initial third element concentration;
- a second PVD target, wherein the second PVD target is a third element PVD target consisting of the third element, wherein the first PVD target and the second PVD target are used simultaneously to deposit a film on a substrate;
- an X-ray photoelectron spectroscopy (XPS) instrument configured to monitor a third element concentration of the film;
- and
- a controller configured to determine parameters of the PVD system based on a target third element concentration that is larger than the initial third element concentration, wherein the controller is configured to continuously tune the third element concentration of the film by adjusting the parameters of the PVD system when a difference between the third element concentration of the film and the target third element concentration is equal to or greater than a threshold.
Dependencies are inferred from the claim text.