H10N 50/10
Magnetoresistive devices
H10N50/10 (Magnetoresistive devices) appears on 6,840 US grants and 7,781 published applications in this corpus.
Search patents in H10N- Granted patents
- 6,840
- Published applications
- 7,781
- Assignees
- 685
- Inventors
- 5,616
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 5 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 11 | 0 |
| 1990 | 6 | 0 |
| 1991 | 9 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 21 | 0 |
| 1998 | 22 | 0 |
| 1999 | 32 | 0 |
| 2000 | 38 | 0 |
| 2001 | 27 | 21 |
| 2002 | 37 | 64 |
| 2003 | 50 | 53 |
| 2004 | 80 | 134 |
| 2005 | 98 | 167 |
| 2006 | 106 | 168 |
| 2007 | 123 | 152 |
| 2008 | 98 | 161 |
| 2009 | 114 | 184 |
| 2010 | 140 | 211 |
| 2011 | 188 | 209 |
| 2012 | 191 | 278 |
| 2013 | 268 | 266 |
| 2014 | 303 | 368 |
| 2015 | 338 | 368 |
| 2016 | 398 | 468 |
| 2017 | 448 | 487 |
| 2018 | 412 | 470 |
| 2019 | 566 | 575 |
| 2020 | 533 | 614 |
| 2021 | 434 | 490 |
| 2022 | 395 | 432 |
| 2023 | 352 | 441 |
| 2024 | 360 | 385 |
| 2025 | 369 | 358 |
| 2026 | 204 | 257 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Optical detection device and signal processing method29 Sep 2026US 12,748,166 B2TDK Corporation
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- MRAM device with tunnel barrier overhang29 Sep 2026US 12,751,211 B2International Business Machines Corporation
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- In situ and tunable deposition of a film1 Oct 2026US 2026/0297727 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic field transducer1 Oct 2026US 2026/0299055 A1TDK Corporation
- Semiconductor device including memory structure and method for manufacturing the same1 Oct 2026US 2026/0301779 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Magnetic tunnel junctions with controlled magnetic response321US 5,650,958 AInternational Business Machines Corporation · 1997
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Current-induced magnetic switching device and memory including the same272US 6,256,223 B1International Business Machines Corporation · 2001
- Three-terminal magnetostatically coupled spin transfer-based MRAM cell269US 7,009,877 B1Grandis, Inc. · 2006
- Method of manufacturing a magnetoresistive-based device248US 8,747,680 B1Everspin Technologies, Inc. · 2014