H10N 50/20
Spin-polarised current-controlled devices
Official title: Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10)
H10N50/20 (Spin-polarised current-controlled devices) appears on 121 US grants and 234 published applications in this corpus.
Search patents in H10N- Granted patents
- 121
- Published applications
- 234
- Assignees
- 110
- Inventors
- 555
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 2 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 1 |
| 2013 | 0 | 4 |
| 2014 | 3 | 1 |
| 2015 | 0 | 1 |
| 2016 | 3 | 4 |
| 2017 | 9 | 13 |
| 2018 | 7 | 2 |
| 2019 | 2 | 6 |
| 2020 | 6 | 16 |
| 2021 | 8 | 7 |
| 2022 | 9 | 12 |
| 2023 | 10 | 27 |
| 2024 | 9 | 55 |
| 2025 | 23 | 49 |
| 2026 | 29 | 33 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films6 Oct 2026US 12,757,639 B2International Business Machines Corporation
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- MRAM device with hexagonal shaped electrodes22 Sep 2026US 12,745,570 B2International Business Machines Corporation
- Sensor based on direct spin hall effect15 Sep 2026US 12,740,325 B2Western Digital Technologies, Inc.
- Interfacial nitridation for growth of perpendicularly magnetized Heusler films15 Sep 2026US 12,740,326 B2International Business Machines Corporation
- Semiconductor quantum device8 Oct 2026US 2026/0313976 A1Teikyo University
- Magnetic tunnel junctions and methods of forming the same8 Oct 2026US 2026/0314266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic switching of 2d dilute magnetic semiconductor monolayers above room temperature in the absence of an external magnetic field24 Sep 2026US 2026/0293533 A1The Trustees of the Stevens Institute of Technology
- Magnetic array, methods of controlling magnetic array, and recording media17 Sep 2026US 2026/0279422 A1TDK Corporation
- Semiconductor structure17 Sep 2026US 2026/0282399 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Spin logic with spin hall electrodes and charge interconnects74US 10,679,782 B2Intel Corporation · 2020
- Magnetic recording element and magnetic memory65US 7,432,574 B2Kabushiki Kaisha Toshiba · 2008
- Device for selective magnetization and method39US 5,191,223 AInternational Business Machines Corporation · 1993
- Skyrmion based universal memory operated by electric current28US 9,773,540 B2The Johns Hopkins University · 2017
- Ion beam etching of STT-RAM structures9US 9,978,934 B2Veeco Instruments Inc. · 2018