Magnetic recording element and magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorsShiho Nakamura, Hirofumi Morise
Life of this patent
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Abstract
A magnetic recording element according to an example of the present invention includes a magnetic free layer whose magnetization is variable in accordance with a current direction passing through a film and whose direction of easy axis of magnetization is a direction perpendicular to a film plane, a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane, and a non-magnetic barrier layer between the magnetic free layer and the magnetic pinned layer. In the magnetic free layer, a relation between a saturated magnetization Ms (emu/cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han<1.2 E7 Ms−1+12.57 Ms.
Claims22
A magnetic recording element comprising:
- a magnetic free layer whose magnetization is variable in accordance with a current direction passing therethrough and whose direction of easy axis of magnetization is a direction perpendicular to a film plane;
- a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane;
- and
- a non-magnetic barrier layer between the magnetic free layer and the magnetic pinned layer,
- wherein the magnetic free layer has a characteristics that a relation between a saturated magnetization Ms (emu/cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han<1.2 E7 Ms−1+12.57 Ms.
A spin FET comprising:
- a magnetic free layer whose magnetization is variable and whose direction of easy axis of magnetization is a direction perpendicular to a film plane;
- a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane;
- a channel region between the magnetic free layer and the magnetic pinned layer;
- a gate insulating layer on the channel region;
- and
- a gate electrode on the gate insulating layer,
- wherein the magnetic free layer has a characteristics that a relation between a saturated magnetization Ms (emu/cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han<1.2 E7 Ms−1+12.57 Ms.
Dependencies are inferred from the claim text.