MRAM device with hexagonal shaped electrodes
AssigneeInternational Business Machines Corporation
InventorsOscar van der Straten, Gabriel Rodriguez, Chih-Chao Yang
Life of this patent
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Abstract
A semiconductor device including a magnetic tunnel junction (MTJ) stack, where a cross section of a bottom electrode of the stack includes a hexagonal profile. A semiconductor device including a lower word line, a magnetic tunnel junction (MTJ) stack, where a cross section of a first electrode of the MTJ stack comprises a hexagonal profile. A method including forming a bottom electrode, the bottom electrode includes a side surface including a width at a middle section of the bottom electrode greater than a width at a lower surface of the bottom electrode, and the width at the middle section of the bottom electrode greater than a width at an upper surface of the bottom electrode.
Claims11
A semiconductor device comprising:
- a magnetic tunnel junction (MTJ) stack, wherein
- a cross section of a bottom electrode of the stack comprises a hexagonal profile and a cross section of a top electrode of the stack comprises a hexagonal profile, wherein a width of the MTJ stack is greater than the width of a connecting surface of the bottom electrode, wherein the connecting surface of the bottom electrode is the surface that connects the bottom electrode to the MTJ stack, and wherein the width of the MTJ stack is greater than the width of a connecting surface of the top electrode, wherein the connecting surface of the top electrode is the surface that connects the top electrode to the MTJ stack.
A semiconductor device comprising:
- a lower word line;
- a magnetic tunnel junction (MTJ) stack, wherein
- a cross section of a first electrode of the MTJ stack comprises a hexagonal profile and a cross section of a second electrode of the stack comprises a hexagonal profile, wherein a width of the MTJ stack is greater than the width of a connecting surface of the first electrode, wherein the connecting surface of the first electrode is the surface that connects the first electrode to the MTJ stack, and wherein the width of the MTJ stack is greater than the width of a connecting surface of the second electrode, wherein the connecting surface of the second electrode is the surface that connects the second electrode to the MTJ stack.
Dependencies are inferred from the claim text.