Skyrmion based universal memory operated by electric current
AssigneeThe Johns Hopkins University
InventorsJiadong Zang, Chia-Ling Chien, Yufan Li, Roger K. Lake, Gen Yin
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Abstract
A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
Claims18
A method for creating a skyrm ion, the method comprising:
- providing a current through an electrode on a top surface of a helimagnetic material, wherein the current creates the skyrm ion on the top surface, wherein the electrode comprises a nanopillar electrode, wherein the nanopillar electrode is deposited on top surface of the helimagnetic material, the helimagnetic material having a contact on a bottom surface or a side surface to provide a current drain.
A method of writing data to a magnetic memory structure, the method comprising:
- creating of a skyrmion by injecting a first current through a metallic nanopillar electrode, wherein the first current, either spin polarized or unpolarized, creates rotating magnetic field on a first side of a helimagnetic material, the helimagnetic material having a contact on a second side to provide a current drain, wherein the skyrm ion represents a computer-readable data;
- and
- applying a static upward magnetic field perpendicular to the helimagnetic material to maintain a ferromagnetic (FM) phase background to stabilize the skyrmion.
A method for reading a skyrmion in a memory device, the method comprising:
- providing a first current, smaller than a second current that created the skyrmion, through a nanopillar or point contact;
- and
- reading the skyrmion by a change of a magnetoresistance between the nanopillar or point contact and a back electrode.
Dependencies are inferred from the claim text.