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AssigneeInternational Business Machines Corporation
InventorsOscar van der Straten, Koichi Motoyama, Chih-Chao Yang
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Embodiments of present invention provide a method of forming a structure. The method includes forming a sacrificial dielectric layer on top of a bottom contact; forming a stack of a first ferromagnetic layer, a tunnel barrier layer, a second ferromagnetic layer, and at least one hard mask on top of the sacrificial dielectric layer; forming an interlevel-dielectric (ILD) layer surrounding the stack; creating one or more via holes in the ILD layer to expose the sacrificial dielectric layer; selectively removing the sacrificial dielectric layer to create an opening underneath the first ferromagnetic layer; filling the opening with a first conductive material to form a bottom electrode; removing the at least one hard mask to expose the second ferromagnetic layer; and forming a top electrode of a second conductive material on top of the second ferromagnetic layer. A structure formed thereby is also provided.
A MRAM structure comprising:
A MRAM structure comprising:
Dependencies are inferred from the claim text.