H10D 84/853
Comprising finfets
Official title: {comprising FinFETs}
H10D84/853 (Comprising finfets) appears on 5,074 US grants and 5,867 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,074
- Published applications
- 5,867
- Assignees
- 243
- Inventors
- 4,166
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 1 | 5 |
| 2006 | 3 | 4 |
| 2007 | 1 | 3 |
| 2008 | 4 | 10 |
| 2009 | 2 | 4 |
| 2010 | 8 | 7 |
| 2011 | 4 | 11 |
| 2012 | 9 | 14 |
| 2013 | 20 | 66 |
| 2014 | 50 | 103 |
| 2015 | 151 | 283 |
| 2016 | 343 | 456 |
| 2017 | 461 | 509 |
| 2018 | 482 | 490 |
| 2019 | 544 | 594 |
| 2020 | 585 | 717 |
| 2021 | 494 | 572 |
| 2022 | 459 | 542 |
| 2023 | 455 | 453 |
| 2024 | 435 | 498 |
| 2025 | 373 | 385 |
| 2026 | 184 | 139 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Finfet device structure with extra fin8 Oct 2026US 2026/0313946 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313970 A1National Tsing Hua University
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014