H10D 84/0193
The components including finfets
Official title: {the components including FinFETs}
H10D84/0193 (The components including finfets) appears on 5,498 US grants and 6,104 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,498
- Published applications
- 6,104
- Assignees
- 305
- Inventors
- 4,609
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 6 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 1 | 0 |
| 1992 | 5 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 6 | 6 |
| 2003 | 2 | 21 |
| 2004 | 4 | 6 |
| 2005 | 4 | 9 |
| 2006 | 5 | 10 |
| 2007 | 5 | 27 |
| 2008 | 12 | 20 |
| 2009 | 13 | 19 |
| 2010 | 24 | 26 |
| 2011 | 16 | 42 |
| 2012 | 32 | 36 |
| 2013 | 41 | 104 |
| 2014 | 95 | 163 |
| 2015 | 208 | 314 |
| 2016 | 402 | 491 |
| 2017 | 517 | 557 |
| 2018 | 533 | 531 |
| 2019 | 608 | 638 |
| 2020 | 612 | 748 |
| 2021 | 517 | 561 |
| 2022 | 449 | 472 |
| 2023 | 432 | 437 |
| 2024 | 410 | 449 |
| 2025 | 340 | 308 |
| 2026 | 157 | 109 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor structure6 Oct 2026US 12,757,456 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having source/drain pattern including multiple layers with different conductivity type6 Oct 2026US 12,757,458 B2Samsung Electronics Co., Ltd.
- Finfet device structure with extra fin8 Oct 2026US 2026/0313946 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with backside interconnection and method for forming the same8 Oct 2026US 2026/0313967 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313970 A1National Tsing Hua University
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016