H10D 84/0184
Manufacturing their gate sidewall spacers
Official title: {Manufacturing their gate sidewall spacers}
H10D84/0184 (Manufacturing their gate sidewall spacers) appears on 1,811 US grants and 2,033 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,811
- Published applications
- 2,033
- Assignees
- 201
- Inventors
- 2,710
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 8 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 7 | 0 |
| 1996 | 7 | 0 |
| 1997 | 6 | 0 |
| 1998 | 12 | 0 |
| 1999 | 13 | 0 |
| 2000 | 22 | 0 |
| 2001 | 23 | 4 |
| 2002 | 12 | 27 |
| 2003 | 40 | 30 |
| 2004 | 25 | 37 |
| 2005 | 22 | 47 |
| 2006 | 36 | 68 |
| 2007 | 32 | 119 |
| 2008 | 44 | 97 |
| 2009 | 70 | 86 |
| 2010 | 74 | 49 |
| 2011 | 63 | 47 |
| 2012 | 61 | 77 |
| 2013 | 69 | 69 |
| 2014 | 69 | 67 |
| 2015 | 78 | 73 |
| 2016 | 79 | 76 |
| 2017 | 103 | 102 |
| 2018 | 86 | 78 |
| 2019 | 89 | 99 |
| 2020 | 132 | 137 |
| 2021 | 81 | 105 |
| 2022 | 85 | 131 |
| 2023 | 82 | 132 |
| 2024 | 91 | 111 |
| 2025 | 110 | 107 |
| 2026 | 57 | 58 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low-K gate spacer and methods for forming the same6 Oct 2026US 12,757,467 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and forming method thereof15 Sep 2026US 12,740,091 B2Semiconductor Manufacturing International (Beijing) Corporation
- Multilayer inner spacer for gate-all-around device8 Sep 2026US 12,733,211 B2APPLIED Materials.Inc.
- Method of manufacturing a semiconductor device with multi-layer gate spacers8 Sep 2026US 12,733,244 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device8 Oct 2026US 2026/0314055 A1Samsung Electronics Co., Ltd.
- Transistor contacts and methods of forming the same24 Sep 2026US 2026/0293242 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Conductive via structures for gate contact or trench contact17 Sep 2026US 2026/0282867 A1Intel Foundry IP LLC
- Semiconductor device structure13 Aug 2026US 2026/0239722 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method6 Aug 2026US 2026/0231511 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- LDD CMOS process291US 4,753,898 AMotorola, Inc. · 1988
- CMOS optimization method utilizing sacrificial sidewall spacer241US 6,093,594 AAdvanced Micro Devices, Inc. · 2000
- Gate stack for high performance sub-micron CMOS devices236US 6,596,599 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2003
- Fin-last FinFET and methods of forming same222US 8,809,139 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014