H10D 84/0179
The gate conductors having different shapes or dimensions
Official title: {the gate conductors having different shapes or dimensions}
H10D84/0179 (The gate conductors having different shapes or dimensions) appears on 854 US grants and 997 published applications in this corpus.
Search patents in H10D- Granted patents
- 854
- Published applications
- 997
- Assignees
- 168
- Inventors
- 1,554
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 4 | 0 |
| 2000 | 11 | 0 |
| 2001 | 7 | 5 |
| 2002 | 13 | 15 |
| 2003 | 16 | 12 |
| 2004 | 14 | 17 |
| 2005 | 11 | 14 |
| 2006 | 12 | 35 |
| 2007 | 17 | 33 |
| 2008 | 20 | 45 |
| 2009 | 23 | 41 |
| 2010 | 30 | 34 |
| 2011 | 40 | 34 |
| 2012 | 25 | 30 |
| 2013 | 35 | 39 |
| 2014 | 40 | 45 |
| 2015 | 58 | 63 |
| 2016 | 56 | 36 |
| 2017 | 40 | 38 |
| 2018 | 33 | 38 |
| 2019 | 56 | 52 |
| 2020 | 41 | 54 |
| 2021 | 45 | 40 |
| 2022 | 44 | 66 |
| 2023 | 39 | 56 |
| 2024 | 41 | 57 |
| 2025 | 53 | 43 |
| 2026 | 20 | 55 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- 3D-stacked semiconductor device having different channel and gate dimensions across lower stack and upper stack6 Oct 2026US 12,757,455 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method25 Aug 2026US 12,721,081 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure11 Aug 2026US 12,707,623 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit devices including intergate spacer and methods of fabrication the same4 Aug 2026US 12,701,784 B2Samsung Electronics Co., Ltd.
- Structure and formation method of semiconductor device with semiconductor nanostructures21 Jul 2026US 12,690,216 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0314062 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0314065 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same1 Oct 2026US 2026/0304951 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method1 Oct 2026US 2026/0305219 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Gate-all-around nanowire MOSFET and method of formation332US 8,969,934 B1International Business Machines Corporation · 2015
- Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures129US 7,352,034 B2International Business Machines Corporation · 2008
- Variable threshold voltage double gated transistors and method of fabrication113US 6,492,212 B1International Business Machines Corporation · 2002
- Semiconductor device and method for fabricating the same97US 6,927,463 B2Sharp Kabushiki Kaisha · 2005
- Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors78US 6,566,204 B1National Semiconductor Corporation · 2003