H10D 8/825
Diodes having bulk potential barriers
Official title: {Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes}
H10D8/825 (Diodes having bulk potential barriers) appears on 107 US grants and 102 published applications in this corpus.
Search patents in H10D- Granted patents
- 107
- Published applications
- 102
- Assignees
- 68
- Inventors
- 216
- Latest grant
- 21 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 2 |
| 2002 | 3 | 1 |
| 2003 | 4 | 4 |
| 2004 | 1 | 2 |
| 2005 | 1 | 1 |
| 2006 | 2 | 3 |
| 2007 | 1 | 3 |
| 2008 | 3 | 11 |
| 2009 | 5 | 11 |
| 2010 | 8 | 6 |
| 2011 | 4 | 5 |
| 2012 | 7 | 3 |
| 2013 | 5 | 4 |
| 2014 | 2 | 3 |
| 2015 | 7 | 6 |
| 2016 | 5 | 5 |
| 2017 | 7 | 3 |
| 2018 | 4 | 10 |
| 2019 | 5 | 3 |
| 2020 | 2 | 4 |
| 2021 | 4 | 3 |
| 2022 | 3 | 2 |
| 2023 | 2 | 1 |
| 2024 | 1 | 2 |
| 2025 | 1 | 1 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for manufacturing semiconductor device30 Jan 2024US 11,888,071 B2Semiconductor Energy Laboratory Co.Ltd.
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- Gallium oxide junction field effect transistor25 Jun 2026US 2026/0182006 A1Power Cubesemi Inc.
- Semiconductor diode structures for pre-pulse elimination in switching or pulsing4 Dec 2025US 2025/0374569 A1Lawrence Livermore National Security, LLC
- Method for manufacturing semiconductor device4 Apr 2024US 2024/0113229 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers66US 10,170,603 B2Atomera Incorporated · 2019
- Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers65US 10,170,604 B2Atomera Incorporated · 2019
- Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice57US 10,249,745 B2Atomera Incorporated · 2019
- Majority charge carrier bipolar diode with fully depleted barrier region at zero bias52US 4,149,174 AU. S. Philips Corporation · 1979
- Semiconductor device including resonant tunneling diode structure having a superlattice50US 10,453,945 B2Atomera Incorporated · 2019