H10D 8/00
Diodes
Official title: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
H10D8/00 (Diodes) appears on 8,927 US grants and 9,648 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,927
- Published applications
- 9,648
- Assignees
- 1,551
- Inventors
- 10,736
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 22 | 0 |
| 1977 | 29 | 0 |
| 1978 | 29 | 0 |
| 1979 | 19 | 0 |
| 1980 | 23 | 0 |
| 1981 | 17 | 0 |
| 1982 | 15 | 0 |
| 1983 | 17 | 0 |
| 1984 | 18 | 0 |
| 1985 | 19 | 0 |
| 1986 | 26 | 0 |
| 1987 | 32 | 0 |
| 1988 | 23 | 0 |
| 1989 | 33 | 0 |
| 1990 | 38 | 0 |
| 1991 | 37 | 0 |
| 1992 | 50 | 0 |
| 1993 | 43 | 0 |
| 1994 | 65 | 0 |
| 1995 | 54 | 0 |
| 1996 | 52 | 0 |
| 1997 | 55 | 0 |
| 1998 | 55 | 0 |
| 1999 | 77 | 0 |
| 2000 | 70 | 0 |
| 2001 | 111 | 43 |
| 2002 | 119 | 130 |
| 2003 | 127 | 144 |
| 2004 | 137 | 122 |
| 2005 | 106 | 195 |
| 2006 | 110 | 199 |
| 2007 | 118 | 234 |
| 2008 | 110 | 247 |
| 2009 | 174 | 268 |
| 2010 | 239 | 275 |
| 2011 | 233 | 311 |
| 2012 | 255 | 391 |
| 2013 | 355 | 475 |
| 2014 | 462 | 557 |
| 2015 | 537 | 613 |
| 2016 | 596 | 638 |
| 2017 | 596 | 588 |
| 2018 | 524 | 542 |
| 2019 | 547 | 529 |
| 2020 | 526 | 538 |
| 2021 | 406 | 454 |
| 2022 | 399 | 435 |
| 2023 | 282 | 494 |
| 2024 | 341 | 495 |
| 2025 | 358 | 423 |
| 2026 | 241 | 308 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Schottky barrier diode6 Oct 2026US 12,757,419 B2Novel Crystal Technology, Inc.
- Semiconductor device6 Oct 2026US 12,757,453 B2Fuji Electric Co., Ltd.
- Diode structure for direct backside contact, backside power delivery network6 Oct 2026US 12,757,457 B2QUALCOMM Incorporated
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Semiconductor device29 Sep 2026US 12,751,023 B2Vanguard International Semiconductor Corporation
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Ultrawide bandgap semiconductor with p-type conductivity and methods of making and use thereof8 Oct 2026US 2026/0313997 A1Ohio State Innovation Foundation
- Mosfet device8 Oct 2026US 2026/0314037 A1Vishay-Siliconix
- Electronic circuit comprising transistor and resistor8 Oct 2026US 2026/0314039 A1Pragmatic Semiconductor Limited
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988