H10D 8/20
Breakdown diodes
Official title: Breakdown diodes, e.g. avalanche diodes
H10D8/20 (Breakdown diodes) appears on 907 US grants and 902 published applications in this corpus.
Search patents in H10D- Granted patents
- 907
- Published applications
- 902
- Assignees
- 292
- Inventors
- 1,444
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 5 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 6 | 0 |
| 1988 | 6 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 7 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 8 | 0 |
| 1996 | 2 | 0 |
| 1997 | 8 | 0 |
| 1998 | 6 | 0 |
| 1999 | 11 | 0 |
| 2000 | 7 | 0 |
| 2001 | 8 | 5 |
| 2002 | 11 | 12 |
| 2003 | 12 | 8 |
| 2004 | 10 | 12 |
| 2005 | 8 | 13 |
| 2006 | 8 | 12 |
| 2007 | 8 | 22 |
| 2008 | 4 | 29 |
| 2009 | 22 | 28 |
| 2010 | 26 | 32 |
| 2011 | 24 | 28 |
| 2012 | 33 | 29 |
| 2013 | 30 | 36 |
| 2014 | 36 | 40 |
| 2015 | 45 | 59 |
| 2016 | 56 | 76 |
| 2017 | 63 | 79 |
| 2018 | 63 | 73 |
| 2019 | 91 | 64 |
| 2020 | 59 | 54 |
| 2021 | 48 | 47 |
| 2022 | 42 | 24 |
| 2023 | 25 | 29 |
| 2024 | 25 | 36 |
| 2025 | 20 | 29 |
| 2026 | 10 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device including protruding region1 Sep 2026US 12,727,184 B2Infineon Technologies AG
- Semiconductor device having drive circuit configured to output voltages applied to plurality of gate electrodes21 Jul 2026US 12,690,262 B2Denso Corporation
- Pulse width modulation circuit configured to control a power transistor of a switched-mode power supply14 Jul 2026US 12,683,505 B2STMicroelectronics International N. V.
- Semiconductor device enabling quick and reliable screening23 Jun 2026US 12,666,724 B2Mitsubishi Electric Corporation
- Switch19 May 2026US 12,633,910 B2NXP USA, Inc.
- Tvs diode having asymmetric breakdown voltage and method of formation24 Sep 2026US 2026/0293172 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device3 Sep 2026US 2026/0262279 A1Fuji Electric Co., Ltd.
- Semiconductor device3 Sep 2026US 2026/0262298 A1Rohm Co., Ltd.
- Strain insensitive zener diode20 Aug 2026US 2026/0247642 A1NXP B. V.
Most cited
By later US patents
- Constant-voltage diode for over-voltage protection102US 5,430,311 AHitachi, Ltd. · 1995
- Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies100US 6,768,616 B2Sarnoff Corporation · 2004
- Diode devices based on superconductivity52US 10,454,014 B2Psiquantum, Corp. · 2019
- High-voltage lateral DMOS device51US 7,719,054 B2Advanced Analogic Technologies (Hong Kong) Limited · 2010
- Semiconductor device comprising polysilicon interconnection layers separated by insulation films49US 5,844,256 ASeiko Epson Corporation · 1998