Semiconductor device including protruding region

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor body including a drift region of a first conductivity type arranged between a first surface and a second surface of the semiconductor body;
• forming a first region of the first conductivity type at the second surface;
• forming a second region of a second conductivity type that is arranged adjacent to the first region at the second surface, wherein the second region includes a first sub-region and a second sub-region, the second sub-region being arranged between the first sub-region and the second surface, the first sub-region being arranged protruding, along a first lateral direction, over an interface or separation region between the second sub-region and the first region;
• and
• forming a first electrode on the second surface, wherein the first electrode is arranged directly adjacent to the first region and the second sub-region, and the first electrode is electrically connected to the drift region by the first region,
• wherein a part of the first region is confined by the first sub-region and the first electrode along a vertical direction,
• wherein along the first lateral direction, a vertical arrangement of the second region and the first region varies as follows:
• over a first lateral span, the first region is present but not the second region;
• over a second lateral span, the first sub-region and the second sub-region of the second region are present but not the first region;
• and
• over a third lateral span interposed between the first lateral span and the second lateral span, the first sub-region of the second region and the first region are present but not the second sub-region of the second region.