Semiconductor device enabling quick and reliable screening

A method of manufacturing a semiconductor device, comprising:

• preparing a semiconductor device
• wherein a switching element, a control circuit configured to control a state of the switching element, and a Zener diode including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input are formed in one semiconductor substrate, and
• wherein the semiconductor device includes a first terminal provided on a main surface of the semiconductor substrate as an anode of the Zener diode, and a second terminal provided on the main surface of the semiconductor substrate as one of an emitter and a source of the switching element and insulated from the first terminal within the semiconductor substrate;
• and
• applying a test voltage to the control circuit via the first terminal, or applying a test voltage to the control circuit via the input terminal when the anode is in an open state, to test the control circuit.

A semiconductor device comprising:

• a switching element formed in a semiconductor substrate;
• a control circuit formed in the semiconductor substrate including the switching element and configured to control a state of the switching element;
• a Zener diode formed in the semiconductor substrate, including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input;
• a first terminal provided on a main surface of the semiconductor substrate, separating the power supply voltage line within the semiconductor substrate between the cathode of the Zener diode and the control circuit, and connected to an input of the control circuit;
• and
• a second terminal provided on the main surface of the semiconductor substrate as the cathode of the Zener diode, and, together with the first terminal, separating the power supply voltage line within the semiconductor substrate between the cathode of the Zener diode and the control circuit.

A method of manufacturing a semiconductor device, comprising:

• preparing a semiconductor device
• wherein a switching element, a control circuit configured to control a state of the switching element, and a Zener diode including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input are formed in one semiconductor substrate, and
• wherein the semiconductor device includes
• a first terminal provided on a main surface of the semiconductor substrate and separating the power supply voltage line within the semiconductor substrate between the cathode of the Zener diode and the control circuit and connected to an input of the control circuit and
• a second terminal provided on the main surface of the semiconductor substrate as the cathode of the Zener diode, and, together with the first terminal, separating the power supply voltage line within the semiconductor substrate between the cathode of the Zener diode and the control circuit;
• and
• applying a test voltage to the control circuit via the first terminal to test the control circuit.

A semiconductor device comprising:

• a switching element formed in a semiconductor substrate;
• a control circuit formed in the semiconductor substrate including the switching element and configured to control a state of the switching element;
• a Zener diode formed in the semiconductor substrate, including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input;
• a transistor formed in the semiconductor substrate and connected in parallel with the power supply voltage line;
• a resistor formed in the semiconductor substrate and provided between a gate and a drain of the transistor;
• a first terminal provided on a main surface of the semiconductor substrate as the gate of the transistor;
• and
• a second terminal provided on the main surface of the semiconductor substrate as one of an emitter and a source of the switching element and insulated from the first terminal within the semiconductor substrate.

A method of manufacturing a semiconductor device, comprising:

• preparing a semiconductor device
• wherein a switching element, a control circuit configured to control a state of the switching element, a Zener diode including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input, a transistor connected in parallel with the power supply voltage line, and a resistor provided between a gate and a drain of the transistor are formed in one semiconductor substrate, and
• wherein the semiconductor device includes
• a first terminal provided on a main surface of the semiconductor substrate as the gate of the transistor and
• a second terminal provided on the main surface of the semiconductor substrate as one of an emitter and a source of the switching element and insulated from the first terminal within the semiconductor substrate;
• and
• applying a test voltage to the control circuit via the first terminal, or applying a test voltage to the control circuit via a third terminal connected to the power supply voltage line between the drain of the transistor and the control circuit to test the control circuit.

A semiconductor device comprising:

• a switching element formed in a semiconductor substrate;
• a control circuit formed in the semiconductor substrate including the switching element and configured to control a state of the switching element;
• a Zener diode formed in the semiconductor substrate, including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input;
• a transistor formed in the semiconductor substrate and connected in parallel with the power supply voltage line;
• a resistor formed in the semiconductor substrate and provided between a gate and a drain of the transistor;
• a Zener diode for short-circuiting formed in the semiconductor substrate, and including a cathode connected to the gate of the transistor and an anode connected to one of an emitter and a source of the switching element;
• and
• a gate terminal provided on a main surface of the semiconductor substrate as the gate of the transistor.

A method of manufacturing a semiconductor device, comprising:

• preparing a semiconductor device
• wherein a switching element, a control circuit configured to control a state of the switching element, a Zener diode including a cathode connected to a power supply voltage line between the control circuit and an input terminal to which a power supply voltage for driving the control circuit is input, a transistor connected in parallel with the power supply voltage line, a resistor provided between a gate and a drain of the transistor, and a Zener diode for short-circuiting including a cathode connected to the gate of the transistor and an anode connected to one of an emitter and a source of the switching element are formed in one semiconductor substrate, and
• wherein the semiconductor device includes a gate terminal provided on a main surface of the semiconductor substrate as the gate of the transistor;
• and
• applying a test voltage to the control circuit via the gate terminal, or applying a test voltage to the control circuit via a third terminal connected to the power supply voltage line between the drain of the transistor and the control circuit to test the control circuit.