Constant-voltage diode for over-voltage protection

A constant-voltage diode, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a plurality of fourth semiconductor regions of said first conductivity type, each of said plurality of fourth semiconductor regions being at least partially surrounded by said second semiconductor region;
• first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;
• wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;
• wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions.

A diode comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a plurality of fourth semiconductor regions of said first conductivity type, each of said plurality of fourth semiconductor regions being at least partially surrounded by said second semiconductor region;
• first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;
• wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions;
• and
• a plurality of further semiconductor regions of said first conductivity type interconnecting said plurality of fourth semiconductor regions, said plurality of further semiconductor regions having a lower impurity concentration than said plurality of fourth semiconductor regions.

A constant-voltage diode, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a fourth semiconductor region of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region;
• and
• a fifth semiconductor region of said second conductivity type contacting said first semiconductor region and being spaced from said second semiconductor region;
• a sixth semiconductor region of said second conductivity type contacting said fifth semiconductor region;
• a seventh semiconductor region of said first conductivity type contacting and being at least partially surrounded by said fifth semiconductor region;
• and
• first and second electrodes in electrical contact with said sixth and third semiconductor regions, respectively;
• wherein said third semiconductor region is interposed between said fourth semiconductor region and said second electrode to embed said fourth semiconductor region and separate it from the second electrode;
• wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and fourth semiconductor regions, and the impurity concentration of at least one of said first and fifth semiconductor regions is less than the impurity concentration of at least one of said sixth and seventh semiconductor regions.

A constant-voltage-diode, comprising:

• a first semiconductor region of first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a plurality of fourth semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region;
• a fifth semiconductor region of said second conductivity type contacting said first semiconductor region and being spaced from said second semiconductor region;
• a sixth semiconductor region of said second conductivity type contacting said fifth semiconductor region;
• a plurality of seventh semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said fifth semiconductor region;
• and
• first and second electrodes in electrical contact with said sixth and third semiconductor regions, respectively;
• wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;
• wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions, and the impurity concentration of at least one of said first and fifth semiconductor regions is less than the impurity concentration of at least one of said sixth and said plurality of seventh semiconductor regions.

A constant-voltage-diode, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a fourth semiconductor region of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region;
• and
• first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;
• wherein said third semiconductor region is interposed between said fourth semiconductor region and said second electrode to embed said fourth semiconductor region and separate it from the second electrode;
• and
• wherein said fourth semiconductor region contacts said third semiconductor region such as to form a second pn junction therebetween;
• and
• wherein the first, second, third and fourth semiconductor regions are such that the second pn junction undergoes breakdown when the reverse biasing of the first pn junction exceeds a predetermined amount, said predetermined amount being insufficient to cause breakdown of said first pn junction.

A constant-voltage-diode, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a plurality of fourth semiconductor regions of said first conductivity type, each of said plurality of fourth semiconductor regions being at least partially surrounded by said second semiconductor region;
• and
• first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;
• wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;
• and
• wherein said plurality of fourth semiconductor regions contact said third semiconductor region so as to form a plurality of second pn junctions therebetween;
• and
• wherein the first, second, third and plurality of fourth semiconductor regions are such that the plurality of second pn junctions undergo breakdown when the reverse biasing of said first pn junction exceeds a predetermined amount, said predetermined amount being insufficient to cause breakdown of said first pn junction.

A bi-directional constant-voltage diode, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other so as to form a first pn junction therebetween;
• a third semiconductor region of said second conductivity type contacting said second semiconductor region;
• a plurality of fourth semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said second semiconductor regions;
• wherein said fourth semiconductor regions contact said third semiconductor region such as to form a second pn junction therebetween;
• a fifth semiconductor region of second conductivity type contacting said first semiconductor region and being spaced from said second semiconductor region;
• wherein said fifth and first semiconductor regions contact each other such as to form a third pn junction therebetween;
• a sixth semiconductor region of said second conductivity type contacting said fifth semiconductor region;
• a plurality of seventh semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said fifth semiconductor region;
• wherein said seventh semiconductor regions contact said sixth semiconductor region such as to form a fourth pn junction therebetween;
• and
• first and second electrodes in electrical contact with said sixth and third semiconductor regions, respectively;
• wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;
• wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions, and the impurity concentration of at least one of said first and fifth semiconductor regions is less than the impurity concentration of at least one of said sixth and said plurality of seventh semiconductor regions;
• wherein the second pn junction undergoes breakdown when the one reverse biasing of the first pn junction exceeds a predetermined amount, said predetermined amount being insufficient to cause breakdown of said first pn junction;
• and the fourth pn junction undergoes breakdown when the another reverse biasing of the third pn junction exceeds a predetermined amount, said amount being insufficient to cause breakdown of said third pn junction.