Tvs diode having asymmetric breakdown voltage and method of formation

A method of forming an asymmetric TVS device, comprising:

• providing a semiconductor substrate, the semiconductor substrate comprising an inner region, the inner region having a first polarity;
• forming a first surface region on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity;
• forming a second surface region, comprising the second polarity, on a second surface of the semiconductor substrate, opposite the first surface,
• wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration;
• and
• forming a first channel region, adjacent to a perimeter of the first surface region, the first channel region comprising the second polarity, wherein the first channel region extends bellow the first surface to a channel depth that is greater than a first depth of the first surface region.

An asymmetric transient voltage suppression (TVS) device, comprising:

• a semiconductor substrate, the semiconductor substrate comprising an inner region, the inner region having a P type polarity;
• a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a N type polarity;
• a second surface region, comprising the N-type polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface,
• wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, less than the first dopant concentration;
• a highly doped layer, disposed between the first surface region and the inner region, the highly doped layer comprising a P type polarity, and having a first dopant concentration that is greater than a second dopant concentration of the inner region;
• and
• a first channel region, disposed adjacent to a perimeter of the first surface region, the first channel region comprising the N type polarity, wherein the first channel region extends bellow the first surface to a channel depth that is greater than a first depth of the first surface region.