Strain insensitive zener diode

A Zener diode comprising:

• a first region comprising a first dopant:
• a second region with a second dopant in contact with the first region, the first region and second region defining a junction of the Zener diode at an interface between the first region and the second region;
• wherein:
• i) the first dopant and the second dopant are different types of carrier-providing dopants;
• and
• ii) the junction comprises a compressive stress in a direction of current flow through the junction resulting from a lattice mismatch between:
• a) the first region and the second region;
• or b) the first region and another region of the Zener diode.

A method of making a Zener diode, comprising:

• implanting a first region of crystalline silicon with a first dopant;
• etching a portion of the first region,
• depositing a doped crystalline silicon into the etched portion to define a second region and a junction between the first region and the second region;
• wherein:
• the doped crystalline silicon of the second region comprises a second dopant;
• the first dopant and the second dopant are different types of carrier-providing dopants;
• and the junction comprises a compressive stress in a direction of current flow through the junction resulting from a lattice mismatch between the first region and the second region.

A method of forming a Zener diode, comprising:

• forming a region of the Zener diode having a first lattice constant;
• forming a first region of the Zener diode in contact with the region of the Zener diode that has the first lattice constant, wherein the first region has a second lattice constant that is different to the first lattice constant and the first region comprises a first dopant;
• forming a second region of the Zener diode in contact with the first region, wherein the second region has a second dopant;
• and
• wherein the first dopant and the second dopant are different types of carrier providing dopants, and a lattice mismatch between the first lattice constant is selected to produce compressive stress at a junction between the first region and the second region in a direction of current flow.