H10D 8/40
Transit-time diodes
Official title: Transit-time diodes, e.g. IMPATT or TRAPATT diodes
H10D8/40 (Transit-time diodes) appears on 75 US grants and 16 published applications in this corpus.
Search patents in H10D- Granted patents
- 75
- Published applications
- 16
- Assignees
- 48
- Inventors
- 115
- Latest grant
- 9 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 5 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 7 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 0 |
| 2003 | 1 | 0 |
| 2004 | 1 | 2 |
| 2005 | 1 | 1 |
| 2006 | 2 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 2 |
| 2010 | 0 | 2 |
| 2011 | 2 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 2 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 1 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 2 |
| 2023 | 0 | 1 |
| 2024 | 2 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing9 Sep 2025US 12,412,744 B2The Board of Trustees of the Leland Stanford Junior University
- Terahertz device24 Sep 2024US 12,099,005 B2Rohm Co., Ltd.
- High-voltage fast-avalanche diode20 Aug 2024US 12,068,419 B2Soreq Nuclear Research Center
- Diode devices and methods of forming a diode device26 Apr 2022US 11,316,063 B2Globalfoundries Singapore Pte. Ltd.
- Transient voltage suppression diodes with reduced harmonics, and methods of making and using17 Dec 2019US 10,510,741 B2Semtech Corporation
- High-voltage fast-avalanche diode9 Feb 2023US 2023/0040734 A1Soreq Nuclear Research Center
- Terahertz device28 Jul 2022US 2022/0236178 A1Rohm Co., Ltd.
- Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing21 Jul 2022US 2022/0230883 A1The Board of Trustees of the Leland Stanford Junior University
- Diode devices and methods of forming a diode device16 Sep 2021US 2021/0288205 A1Globalfoundries Singapore Pte. Ltd.
- Transient Voltage Suppression Diodes with Reduced Harmonics, and Methods of Making and Using12 Apr 2018US 2018/0102356 A1Semtech Corporation
Most cited
By later US patents
- Bipolar transistor with monoatomic base layer between emitter and collector layers105US 5,373,186 AMAX-PLANCK-GESELLSCHAFT zur FOERDERUNG der WISSENSCHAFTEN.e.V · 1994
- Semiconductor devices with at least one monoatomic layer of doping atoms92US 4,882,609 AMax-Planck-Gesellschaft zur Forderung der Wissenschafter e.V. · 1989
- Method of forming semiconductor structure65US 6,436,784 B1Hitachi Europe Limited · 2002
- Ballistic transport filter and device60US 4,866,488 ATexas Instruments Incorporated · 1989
- Graded bandgap rectifying semiconductor devices30US 4,353,081 ABell Telephone Laboratories, Incorporated · 1982