Diode devices and methods of forming a diode device
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsSandipta ROY, Khee Yong LIM, Lanxiang WANG, Kiok Boone Elgin QUEK, Jing Hua Michelle TNG
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Abstract
According to various embodiments, there is provided a diode device including a semiconductor substrate of a first conductivity type, a first semiconductor region formed within the semiconductor substrate, an epitaxial region of the first conductivity type, and a second semiconductor region of a second conductivity type different from the first conductivity type. The first semiconductor region includes a chalcogen. The epitaxial region is formed over the first semiconductor region. The second semiconductor region is formed over the epitaxial region.
Claims20
A diode device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor region formed within the semiconductor substrate, wherein the first semiconductor region comprises a chalcogen;
- an epitaxial region of the first conductivity type, formed over the first semiconductor region;
- and
- a second semiconductor region of a second conductivity type different from the first conductivity type, formed over the epitaxial region.
A method of forming a diode device, the method comprising:
- providing a first semiconductor region within a semiconductor substrate of a first conductivity type;
- doping the first semiconductor region with a chalcogen;
- forming an epitaxial region of the first conductivity type, over the first semiconductor region;
- and
- forming a second semiconductor region of a second conductivity type different from the first conductivity type, over the epitaxial region.
Dependencies are inferred from the claim text.