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US 2023/0040734 A1Published application
High-voltage fast-avalanche diode
AssigneeSoreq Nuclear Research Center
InventorsAmit Kesar, Gil Atar, Shoval Zoran, Doron Cohen-Elias
Life of this patent
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Abstract
A high-voltage fast-avalanche diode, being a silicon-avalanche shaper or sharpener (SAS), has a thick active region above 300 microns in thickness.
Claims5
A diode device comprising:
- a high-voltage fast-avalanche diode comprising a silicon-avalanche shaper or sharpener (SAS) that has a thick active region above 300 microns in thickness.
Dependencies are inferred from the claim text.