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US 12,068,419 B2Granted
High-voltage fast-avalanche diode
AssigneeSoreq Nuclear Research Center
InventorsAmit Kesar, Gil Atar, Shoval Zoran, Doron Cohen-Elias
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Abstract
A method of using a diode device including providing a diode that includes an active region including a 525 micron thick. 10 kΩ-cm, n-type, float zone wafer, and operating the diode as a silicon-avalanche semiconductor switch.
Claims6
A diode device comprising:
- a diode comprising a silicon-avalanche semiconductor switch that has an active region comprising a 525 micron thick, 10 kΩ-cm, n-type, float zone wafer,
- wherein a cathode of said diode is connected to ground via a 1 pF peaking capacitor, and also to a 6-kV, 1-ns pulsed-power generator via a 200 pF DC-block capacitor and a 20 nH coil.
A method of using a diode device comprising:
- providing a diode comprising an active region comprising a 525 micron thick, 10 kΩ-cm, n-type, float zone wafer;
- and
- comprising operating said diode as a 7.9-kV, 100-ps rise-time silicon-avalanche semiconductor switch.
A method of using a diode device comprising:
- providing a diode comprising an active region comprising a 525 micron thick, 10 kΩ-cm, n-type, float zone wafer;
- and
- operating said diode as a silicon-avalanche semiconductor switch, wherein operating said diode comprises connecting a cathode of said diode to ground via a 1 pF peaking capacitor, and also to a 6-kV, 1-ns pulsed-power generator via a 200 pF DC-block capacitor and a 20 nH coil.
Dependencies are inferred from the claim text.