Transient voltage suppression diodes with reduced harmonics, and methods of making and using
AssigneeSemtech Corporation
InventorsMaykel Ghorbanzadeh, Jonathan Clark, William A. Russell
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.
Claims25
A method of making a semiconductor device, comprising:
- providing a semiconductor die;
- forming a transient voltage suppression (TVS) structure in the semiconductor die;
- forming a capacitor over the semiconductor die;
- and
- forming a semiconductor package with the TVS structure and capacitor coupled in parallel.
A method of making a semiconductor device, comprising:
- providing a semiconductor die including a transient voltage suppression (TVS) structure formed in the semiconductor die;
- and
- forming a capacitor over the semiconductor die.
A semiconductor device, comprising:
- a semiconductor die including a transient voltage suppression (TVS) structure formed in the semiconductor die;
- a capacitor formed over the semiconductor die;
- a first interconnect structure formed over the semiconductor die;
- and
- a second interconnect structure formed over the semiconductor die, wherein the TVS structure and capacitor are electrically coupled in parallel between the first interconnect structure and second interconnect structure.
A semiconductor device, comprising:
- a semiconductor die including a transient voltage suppression (TVS) structure formed in the semiconductor die;
- and
- a capacitor formed over the semiconductor die.
Dependencies are inferred from the claim text.