Diode devices and methods of forming a diode device
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsSandipta Roy, Khee Yong Lim, Lanxiang Wang, Kiok Boone Elgin Quek, Jing Hua Michelle Tng
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Abstract
According to various embodiments, there is provided a diode device including a semiconductor substrate of a first conductivity type, a first semiconductor region formed within the semiconductor substrate, an epitaxial region of the first conductivity type, and a second semiconductor region of a second conductivity type different from the first conductivity type. The first semiconductor region includes a chalcogen. The epitaxial region is formed over the first semiconductor region. The second semiconductor region is formed over the epitaxial region.
Claims20
A diode device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor region formed within the semiconductor substrate, wherein the first semiconductor region comprises a chalcogen;
- an epitaxial region of the first conductivity type, a first part of the epitaxial region formed over the first semiconductor region;
- a second semiconductor region of a second conductivity type different from the first conductivity type, formed over the first part of the epitaxial region;
- an isolation region formed within the substrate, a first side of the isolation region arranged adjacent to each of the second semiconductor region, the first part of the epitaxial region, and the first semiconductor region;
- and
- a well region of the first conductivity type, formed within a second part of the epitaxial region and adjacent to a second side of the isolation region, the second side of the isolation region being opposite to the first side of the isolation region.
A method of forming a diode device, the method comprising:
- providing a first semiconductor region within a semiconductor substrate of a first conductivity type;
- doping the first semiconductor region with a chalcogen;
- forming an epitaxial region of the first conductivity type, including a first part of the epitaxial region over the first semiconductor region;
- forming a second semiconductor region of a second conductivity type different from the first conductivity type, over the first part of the epitaxial region;
- forming an isolation region, a first side of the isolation region adjacent to each of the second semiconductor region, the first part of the epitaxial region, and the first semiconductor region;
- and
- forming a well region of the first conductivity type, within a second part of the epitaxial region and adjacent to a second side of the isolation region, the second side of the isolation region being opposite to the first side of the isolation region.
Dependencies are inferred from the claim text.