Semiconductor device

A semiconductor device formed on a semiconductor substrate including an upper surface and a lower surface, the semiconductor device comprising:

• a plurality of trench portions which are formed from the upper surface of the semiconductor substrate to an inside of the semiconductor substrate and are arranged side by side in a first direction at the upper surface of the semiconductor substrate;
• one or more mesa portions which are sandwiched between two trench portions among the plurality of trench portions;
• an upper-surface electrode which is provided above the upper surface of the semiconductor substrate and does not contain a metal having a higher melting point than a material of the semiconductor substrate;
• and
• a barrier metal which is arranged between at least one of the mesa portions and the upper-surface electrode and contains the metal having the higher melting point than the material of the semiconductor substrate, and
• the semiconductor device including:
• a first region where the barrier metal is not provided between the trench portion and the upper-surface electrode, where a first mesa portion is provided which is the mesa portion in contact with the trench portion not provided with the barrier metal, and where the barrier metal is provided between the first mesa portion and the upper-surface electrode;
• and
• a second region where the barrier metal is provided between the trench portion and the upper-surface electrode.