Semiconductor device

A semiconductor device, comprising:

• a substrate;
• a first well region, having a first conductivity type and disposed in the substrate;
• a first doped region, having a second conductivity type and buried in the first well region, wherein the first doped region comprises a middle portion and a peripheral portion, and the first well region comprises a continuous block located directly above the middle portion;
• a second doped region, having the second conductivity type, disposed in the first well region, and located directly above the peripheral portion of the first doped region;
• a third doped region, having the first conductivity type and disposed in the first well region;
• a first isolation structure, disposed in the first well region and located between the second doped region and the third doped region;
• an anode electrode, disposed above the substrate and electrically connected to the continuous block of the first well region;
• and
• a cathode electrode, disposed above the substrate and electrically connected to the third doped region.