Integration of nanosheets with bottom dielectric isolation and ideal diode

Abstract

Techniques for co-integrating gate-all-around nanosheet devices having bottom dielectric isolation with an ideal vertical P-N-P diode on a common substrate are provided. In one aspect, a semiconductor structure includes: a diode in a first region of a bulk substrate, where the diode includes P-N-P vertical implanted layers present in the bulk substrate, and a single source/drain region epitaxial material disposed on the P-N-P vertical implanted layers; and a nanosheet device with a bottom dielectric isolation layer in a second region of the bulk substrate. The nanosheet device can include nanosheet channels and gates that surround a portion of each of the nanosheet channels in a gate-all-around configuration. A method of fabricating the present semiconductor structures is also provided.

Dependencies are inferred from the claim text.