Stacked III-V semiconductor diode

A stacked semiconductor diode comprising or consisting of GaAs, and comprising:

• a heavily n-doped cathode layer;
• a heavily p-doped anode layer;
• and
• a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8·1015 cm−3,
• wherein the drift region has a lightly n-doped drift layer and a lightly p-doped drift layer arranged between the n-doped drift layer and the anode layer,
• wherein both drift layers each have a layer thickness of at least 5 μm,
• wherein the cathode layer has a first section with a constant or at least substantially constant dopant concentration of at least 1·1017 cm−3 or at least 1·1018 cm−3 and a second section arranged between the first section and the drift region,
• wherein the second section has a layer thickness of at least 1 μm and a dopant concentration gradient that increases in the direction of the first section up to a dopant concentration maximum, and
• wherein the dopant concentration maximum is less than or equal to the dopant concentration of the first section.