Semiconductor device

A semiconductor device comprising:

• a first composite pn-junction structure having a first junction grading coefficient m1, a first partial junction grading coefficient m11, and a second partial junction grading coefficient m12, wherein the first partial junction grading coefficient m11 is different from the second partial junction grading coefficient m12, and wherein the first junction grading coefficient m1 is based on a combination of the first and second partial junction grading coefficients m11, m12;
• and
• a second composite pn-junction structure having a second junction grading coefficient m2, a first partial junction grading coefficient m21, and a second partial junction grading coefficient m22, wherein the first partial junction grading coefficient m21 is different from the second partial junction grading coefficient m22, and wherein the second junction grading coefficient m2 is based on a combination of the first and second partial junction grading coefficients m21, m22,
• wherein the first composite pn-junction structure is coupled to the second composite pn-junction structure.

A method comprising:

• providing a first composite pn-junction structure having a first junction grading coefficient m1, a first partial junction grading coefficient m11, and a second partial junction grading coefficient m12, wherein the first partial junction grading coefficient m11 is different from the second partial junction grading coefficient m12, and wherein the first junction grading coefficient m1 is based on a combination of the first and second partial junction grading coefficients m11, m12;
• providing a second composite pn-junction structure having a second junction grading coefficient m2, a first partial junction grading coefficient m21, and a second partial junction grading coefficient m22, wherein the first partial junction grading coefficient m21 is different from the second partial junction grading coefficient m22, and wherein the second junction grading coefficient m2 is based on a combination of the first and second partial junction grading coefficients m21, m22;
• and
• coupling the first composite pn-junction structure to the second composite pn-junction structure.