US 2026/0190362 A1Published application

Power semiconductor device

AssigneeTaiwan-Asia Semiconductor Corporation

InventorsYueh-Lin Lee, De-Lin Hong

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Abstract

A power semiconductor device is provided. The power semiconductor device mainly comprises a first conductive-type highly-doped substrate and a second conductive-type contact region formed thereon. The contact region has a dual-layer doping structure comprising a highly-doped region and a lightly-doped region. Accordingly, the active area of the power device has a five-layer structure of a second conductive-type highly-doped region, a second conductive-type lightly-doped region, an intrinsic semiconductor epitaxial layer, a first conductive-type lightly-doped layer, and a first conductive-type highly-doped substrate, for improving the breakdown voltage of the power device. In addition, metal silicide layers are introduced on the front and back sides of the device and form ohmic contacts with the metal layers thereof to shorten the reverse recovery time (trr) of the device. The metal electrode on the front of the device has a plurality of ring-shaped designs, including at least one second conductive-type metal ring and one first conductive-type metal ring.

Claims14

Dependent claims

A power semiconductor device, comprising:

a substrate having a first conductive-type high doping;
a first conductive-type lightly-doped epitaxial layer disposed on the substrate;
an intrinsic semiconductor epitaxial layer disposed on the first conductive-type lightly-doped epitaxial layer;
a central second conductive-type doped region disposed in a central region of the intrinsic semiconductor epitaxial layer;
at least one annular second conductive-type doped region surrounding the central second conductive-type doped region and disposed spaced apart in a peripheral region of the intrinsic semiconductor epitaxial layer;
and
an annular first conductive-type doped region surrounding the at least one annular second conductive-type doped region and disposed in the peripheral region of the intrinsic semiconductor epitaxial layer,
wherein the central second conductive-type doped region and the at least one annular second conductive-type doped region comprise:
a second conductive-type lightly-doped region adjacent to the intrinsic semiconductor epitaxial layer;
a second conductive-type highly-doped region encapsulated within the second conductive-type lightly-doped region;
and
a first metal silicide layer disposed on the second conductive-type highly-doped region.

9 more elements

Dependencies are inferred from the claim text.