H10D 62/882
Graphene
Official title: {Graphene}
H10D62/882 (Graphene) appears on 1,328 US grants and 1,652 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,328
- Published applications
- 1,652
- Assignees
- 465
- Inventors
- 2,536
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 2 | 7 |
| 2007 | 3 | 9 |
| 2008 | 3 | 6 |
| 2009 | 8 | 29 |
| 2010 | 15 | 49 |
| 2011 | 25 | 70 |
| 2012 | 41 | 94 |
| 2013 | 76 | 116 |
| 2014 | 101 | 164 |
| 2015 | 141 | 149 |
| 2016 | 127 | 104 |
| 2017 | 118 | 123 |
| 2018 | 120 | 114 |
| 2019 | 105 | 97 |
| 2020 | 99 | 95 |
| 2021 | 70 | 79 |
| 2022 | 55 | 70 |
| 2023 | 55 | 96 |
| 2024 | 76 | 79 |
| 2025 | 48 | 63 |
| 2026 | 39 | 36 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- Complementary transistor and semiconductor device8 Sep 2026US 12,733,254 B2Sony Group Corporation
- Vacuum tunneling device and method of manufacturing the same25 Aug 2026US 12,716,124 B2Daegu Gyeongbuk Institute of Science and Technology
- Method of controlling charge doping in van der Waals heterostructures25 Aug 2026US 12,720,789 B2The Trustees of Boston College
- Integrated circuit structure and method for forming the same25 Aug 2026US 12,720,834 B2National Taiwan University
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314000 A1National Taiwan University
- Integrated circuit structure and method for forming the same8 Oct 2026US 2026/0314001 A1National Taiwan University
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices1 Oct 2026US 2026/0304848 A1Samsung Electronics Co., Ltd.
- Systems utilizing graphene varactor hysteresis effects for sample characterization24 Sep 2026US 2026/0287540 A1Regents of the University of Minnesota
- 2d van der waals transistors gated with spin crossover/ferroelectric layers for memory applications17 Sep 2026US 2026/0282423 A1Board of Regents of the University of Nebraska
Most cited
By later US patents
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp371US 7,943,491 B2The Board of Trustees of the University of Illinois · 2011
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates309US 8,198,621 B2The Board of Trustees of the University of Illinois · 2012
- All graphene flash memory device281US 8,772,853 B2The Regents of the University of California · 2014