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US 12,720,789 B2Granted
Method of controlling charge doping in van der Waals heterostructures
AssigneesWashington University, The Trustees of Boston College
InventorsErik Henriksen, Jesse Balgley, Kenneth S. Burch, Yiping Wang
Life of this patent
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Abstract
The present disclosure is directed to controlling charge transfer in 2D materials. A charge-transfer controlled 2D device comprises a 2D active conducting material, a 2D charge transfer source material, and at least one overlapping portion wherein the 2D active conducting material overlaps the 2D charge transfer source material including at least one edge of the 2D charge transfer source material.
Claims8
A charge-transfer controlled 2D device comprising:
- a 2D active conducting material;
- a 2D charge transfer source material;
- and
- at least one overlapping portion wherein the 2D active conducting material overlaps the 2D charge transfer source material including at least one edge of the 2D charge transfer source material;
- wherein:
- at least a part of the at least one overlapping portion comprises the 2D active conducting material being in direct contact with the 2D charge transfer source material;
- the charge-transfer controlled 2D device further comprises an insulating layer such that the at least a part of the at least one overlapping portion comprises the insulating layer disposed between the 2D active conducting material and the 2D charge transfer source material, wherein the insulating layer is selected from hexagonal boron nitride and AlOx;
- the 2D charge transfer source material comprises at least one of a crystalline material and an exfoliated material;
- and
- the 2D charge transfer source material is selected from alpha-RuCl3 and tungsten oxyselenide.
7 more elements
A method for controlling charge transfer in 2D materials, the method comprising:
- providing a 2D active conducting material;
- providing a 2D charge transfer source material;
- and
- positioning the 2D active conducting material to overlap at least one portion of the 2D charge transfer source material including at least one edge of the 2D charge transfer source material;
- wherein:
- the positioning comprises overlapping at least a part of the 2D active conducting material in direct contact with the 2D charge transfer source material;
- the method further comprises providing an insulating layer on a surface of the 2D charge transfer source material, and wherein the positioning comprises overlapping the at least a part of the 2D active conducting material in direct contact with the insulating layer on the surface of the 2D charge transfer source material, wherein the insulating layer is selected from hexagonal boron nitride and AlOx;
- the 2D charge transfer source material comprises at least one of a crystalline material and an exfoliated material;
- and
- the 2D charge transfer source material is selected from alpha-RuCl3 and tungsten oxyselenide.
7 more elements
A charge-transfer controlled 2D system comprising:
- a top gate;
- a charge-transfer controlled 2D device including a 2D active conducting material, a 2D charge transfer source material, and at least one overlapping portion wherein the 2D active conducting material overlaps the 2D charge transfer source material including at least one edge of the 2D charge transfer source material,
- wherein:
- at least a part of the at least one overlapping portion comprises the 2D active conducting material being in direct contact with the 2D charge transfer source material;
- the charge-transfer controlled 2D device further comprises an insulating layer such that the at least a part of the at least one overlapping portion comprises the insulating layer disposed between the 2D active conducting material and the 2D charge transfer source material, wherein the insulating layer is selected from hexagonal boron nitride and AlOx;
- the 2D charge transfer source material comprises at least one of a crystalline material and an exfoliated material;
- and
- the 2D charge transfer source material is selected from alpha-RuCl3 and tungsten oxyselenide;
- and
- a bottom gate.
7 more elements
Dependencies are inferred from the claim text.