H10D 62/881
Being a two-dimensional material
Official title: {being a two-dimensional material}
H10D62/881 (Being a two-dimensional material) appears on 1,515 US grants and 2,029 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,515
- Published applications
- 2,029
- Assignees
- 503
- Inventors
- 3,034
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 2 | 7 |
| 2007 | 4 | 11 |
| 2008 | 4 | 6 |
| 2009 | 8 | 30 |
| 2010 | 16 | 49 |
| 2011 | 26 | 70 |
| 2012 | 41 | 94 |
| 2013 | 76 | 116 |
| 2014 | 101 | 164 |
| 2015 | 142 | 153 |
| 2016 | 133 | 112 |
| 2017 | 130 | 135 |
| 2018 | 126 | 132 |
| 2019 | 122 | 113 |
| 2020 | 115 | 118 |
| 2021 | 84 | 106 |
| 2022 | 71 | 102 |
| 2023 | 71 | 163 |
| 2024 | 105 | 126 |
| 2025 | 86 | 140 |
| 2026 | 51 | 78 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- Back-end-of-line 2D transistor8 Sep 2026US 12,733,197 B2Intel Corporation
- Complementary transistor and semiconductor device8 Sep 2026US 12,733,254 B2Sony Group Corporation
- Vacuum tunneling device and method of manufacturing the same25 Aug 2026US 12,716,124 B2Daegu Gyeongbuk Institute of Science and Technology
- Method of controlling charge doping in van der Waals heterostructures25 Aug 2026US 12,720,789 B2The Trustees of Boston College
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314000 A1National Taiwan University
- Integrated circuit structure and method for forming the same8 Oct 2026US 2026/0314001 A1National Taiwan University
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Bilayer structures for transistor channel layers1 Oct 2026US 2026/0304821 A1Monash University
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices1 Oct 2026US 2026/0304848 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp371US 7,943,491 B2The Board of Trustees of the University of Illinois · 2011
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates309US 8,198,621 B2The Board of Trustees of the University of Illinois · 2012
- All graphene flash memory device281US 8,772,853 B2The Regents of the University of California · 2014