H10D 62/883
Transition metal dichalcogenides
Official title: {Transition metal dichalcogenides, e.g. MoSe2}
H10D62/883 (Transition metal dichalcogenides) appears on 235 US grants and 457 published applications in this corpus.
Search patents in H10D- Granted patents
- 235
- Published applications
- 457
- Assignees
- 120
- Inventors
- 808
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 6 |
| 2016 | 7 | 17 |
| 2017 | 11 | 12 |
| 2018 | 14 | 28 |
| 2019 | 33 | 28 |
| 2020 | 22 | 26 |
| 2021 | 18 | 31 |
| 2022 | 21 | 36 |
| 2023 | 17 | 64 |
| 2024 | 35 | 59 |
| 2025 | 41 | 95 |
| 2026 | 12 | 52 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Back-end-of-line 2D transistor8 Sep 2026US 12,733,197 B2Intel Corporation
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices14 Jul 2026US 12,684,823 B2Samsung Electronics Co., Ltd.
- Forming 3D transistors using 2D van der WAALS materials2 Jun 2026US 12,648,236 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic device including the same19 May 2026US 12,635,204 B2Samsung Electronics Co., Ltd.
- Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers12 May 2026US 12,628,383 B2Intel Corporation
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Bilayer structures for transistor channel layers1 Oct 2026US 2026/0304821 A1Monash University
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices1 Oct 2026US 2026/0304848 A1Samsung Electronics Co., Ltd.
- Metal-catalyzed growth of transition metal dichalcogenide materials for gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304944 A1Intel Corporation
- Metal-to-two-dimensional material interface for transistors and method for fabricating same24 Sep 2026US 2026/0293185 A1Intel Corporation
Most cited
By later US patents
- Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors38US 9,337,210 B2Micron Technology, Inc. · 2016
- Nanosheet field-effect transistors including a two-dimensional semiconducting material35US 10,388,732 B1Globalfoundries Inc. · 2019
- Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors21US 9,559,118 B2Micron Technology, Inc. · 2017
- 3D UTB transistor using 2D material channels19US 9,240,478 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Chemically-sensitive field effect transistor15US 10,429,342 B22019