Metal-catalyzed growth of transition metal dichalcogenide materials for gate-all-around (gaa) transistor devices

A method comprising:

• forming a superlattice stack comprising alternating first layers and second layers, the first layers comprising silicon and oxygen and the second layers comprising silicon and nitrogen;
• forming dimple regions adjacent to the second layers, the dimple regions comprising a metal;
• removing the second layers;
• forming transition metal dichalcogenide material channels between respective pairs of the dimple regions, the forming comprising exposing the dimple regions to chalcogen gas and heat;
• forming source/drain regions adjacent opposite ends of the transition metal dichalcogenide material channels;
• removing the dimple regions;
• removing the first layers;
• forming gate dielectric layers around the transition metal dichalcogenide material channels;
• and
• forming a gate material around the gate dielectric layers.