H10D 62/53
The imperfections being within the semiconductor body
Official title: the imperfections being within the semiconductor body
H10D62/53 (The imperfections being within the semiconductor body) appears on 1,122 US grants and 1,279 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,122
- Published applications
- 1,279
- Assignees
- 302
- Inventors
- 1,848
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 8 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 2 | 0 |
| 1998 | 8 | 0 |
| 1999 | 10 | 0 |
| 2000 | 12 | 0 |
| 2001 | 13 | 5 |
| 2002 | 19 | 11 |
| 2003 | 5 | 14 |
| 2004 | 12 | 12 |
| 2005 | 9 | 15 |
| 2006 | 7 | 18 |
| 2007 | 13 | 15 |
| 2008 | 10 | 32 |
| 2009 | 14 | 10 |
| 2010 | 19 | 19 |
| 2011 | 12 | 22 |
| 2012 | 20 | 31 |
| 2013 | 25 | 38 |
| 2014 | 49 | 69 |
| 2015 | 51 | 82 |
| 2016 | 82 | 94 |
| 2017 | 95 | 101 |
| 2018 | 80 | 89 |
| 2019 | 80 | 88 |
| 2020 | 77 | 82 |
| 2021 | 72 | 63 |
| 2022 | 55 | 83 |
| 2023 | 41 | 82 |
| 2024 | 59 | 87 |
| 2025 | 63 | 74 |
| 2026 | 41 | 43 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Composite substrate and manufacturing method therefor, and semiconductor device structure6 Oct 2026US 12,757,461 B2Enkris Semiconductor, Inc.
- Epitaxial structure of semiconductor device and manufacturing method thereof, and semiconductor device29 Sep 2026US 12,751,035 B2Dynax Semiconductor, Inc.
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,354 B2Fuji Electric Co., Ltd.
- Semiconductor device and related chip and preparation method25 Aug 2026US 12,720,781 B2Huawei Technologies Co., Ltd.
- Electric field readout of a solid-state sensor8 Oct 2026US 2026/0313995 A1Rtx Bbn Technologies, Inc.
- Quantum sensor and quantum sensing apparatus24 Sep 2026US 2026/0293222 A1Toyota Jidosha Kabushiki Kaisha
- Semiconductor device and method for manufacturing same17 Sep 2026US 2026/0282477 A1Kabushiki Kaisha Toshiba
- Porous pseudo-substrates for group iii-nitrides27 Aug 2026US 2026/0255641 A1
- Method of manufacturing a power diode20 Aug 2026US 2026/0247641 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Method of increasing the mobility of MOS transistors by use of localized stress regions230US 6,228,694 B1Intel Corporation · 2001
- Method of forming epi film in substrate trench200US 8,415,718 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Electronic device with recovery layer proximate to active layer199US 5,081,513 AXerox Corporation · 1992
- Semiconductor devices and method for making the same149US 4,969,031 AHitachi, Ltd. · 1990
- Low defect Si:C layer with retrograde carbon profile122US 7,696,000 B2International Business Machines Corporation · 2010