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AssigneeInternational Business Machines Corporation
InventorsYaocheng Liu, Subramanian S. Iyer, Jinghong Li
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Formation of carbon-substituted single crystal silicon layer is prone to generation of large number of defects especially at high carbon concentration. The present invention provides structures and methods for providing low defect carbon-substituted single crystal silicon layer even for high concentration of carbon in the silicon. According to the present invention, the active retrograde profile in the carbon implantation reduces the defect density in the carbon-substituted single crystal silicon layer obtained after a solid phase epitaxy. This enables the formation of semiconductor structures with compressive stress and low defect density. When applied to semiconductor transistors, the present invention enables N-type field effect transistors with enhanced electron mobility through the tensile stress that is present into the channel.
A semiconductor structure comprising a carbon-substituted single crystal silicon layer having a thickness and a defect density less than about 1.0×109/cm2 located beneath a surface of a semiconductor substrate, wherein said carbon-substituted single crystal silicon layer includes a first volume, a second volume, a third volume, and a fourth volume,
A semiconductor device comprising at least one transistor with a source and a drain on a semiconductor substrate, each of said source and said drain containing a portion of a carbon-substituted single crystal silicon layer that is located beneath a surface of a semiconductor substrate and has a thickness and a defect density less than about 1.0×109/cm2,
Dependencies are inferred from the claim text.