Electronic device with recovery layer proximate to active layer

An electronic device including a substantially intrinsic non-single crystal semiconductor active layer within which a conducting channel is formed, in the ON state of said device, by carriers of one sign being induced therein, and

• a recovery layer for accelerating the equilibration of said channel, said recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to said active layer, so as to provide to said channel carriers of a sign opposite to the carriers of said one sign.

An electronic device including a substantially intrinsic non-single crystal semiconductor active layer, having a charge transport channel therein, within which external stresses on said device cause regions within said charge transport channel to depart from their equilibrium state by changing their distribution of defects, and

• recovery means comprising a doped non-single crystal semiconductor layer positioned in proximity to said active layer, so as to provide to said channel regions carriers of a sign necessary to return said regions to their equilibrium state, said recovery means accelerating the rate of equilibration of said active layer as compared to the rate of equilibration of an electronic device of the same configuration without said recovery means.

An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, said active layer being responsive to the application of stress upon said device by shifting its Fermi level from an equilibrium state within its mobility gap and the creation of a surplus number of metastable defects in said mobility gap located to oppose the shift in said Fermi level, whereby upon removal of said stress said active layer has an abundance of metastable defects, the improvement comprising

• a doped non-single crystal semiconductor recovery layer positioned in proximity to said active layer, said recovery layer being responsive to said application of stress upon said device by changing the number of active dopant atoms therein and changing the charge in said recovery layer so that charge may spill over from said recovery layer to said active layer for accelerating the return of said active layer to said equilibrium state.

An electronic device including a substantially intrinsic non-single crystal semiconductor active layer, a gate electrode, a gate dielectric layer and a recovery means for accelerating the equilibration of said active layer and said gate dielectric layer, said recovery means comprising a doped non-single crystal semiconductor layer positioned in proximity to said active layer and said gate dielectric layer.

An electronic device including a charge transport region, a gate electrode separated from said charge transport region by a gate dielectric, within which external stresses on said device cause charge trapping within regions of said gate dielectric, and

• a recovery layer for accelerating the neutralization of said charge, said recovery layer comprising a doped non-single crystal semiconductor layer, including both p-type and n-type dopants, positioned in proximity to said active layer.

An electronic device including a charge transport region, a gate electrode separated from said charge transport region by a gate dielectric, within which external stresses on said device cause charge trapping within regions of said gate dielectric, and

• recovery means comprising a doped non-single crystal semiconductor layer positioned in proximity to said active layer, so as to provide to said regions carriers of a sign necessary to return said regions to electrical neutrality.