Method of forming epi film in substrate trench
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJeff J. Xu
Life of this patent
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Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a trench in the substrate, where a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation, and epitaxially (epi) growing a semiconductor material in the trench. The epi process utilizes an etch component. A first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation.
Claims17
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a trench in the substrate, wherein a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation;
- and
- epitaxially (epi) growing a semiconductor material in the trench;
- wherein the epi process utilizes an etch component, and wherein a first growth rate on the first crystal plane orientation is greater than a second growth rate on the second crystal plane orientation.
A method of fabricating a semiconductor device, comprising:
- forming a transistor on a semiconductor substrate including:
- a gate structure disposed over the substrate;
- a trench in the semiconductor substrate adjacent the gate structure, wherein a bottom surface of the trench has a first crystal plane orientation of the substrate, and two opposing side surfaces of the trench have a second crystal plane orientation of the substrate, the first crystal plane orientation being different from the second crystal plane orientation;
- and
- a strained feature formed within the trench on the substrate, wherein the strained feature is formed by growing an epi film by a bottom-up growth process such that the epi is grown predominately from the bottom surface of a trench in the semiconductor substrate and a side surface of the epi-film is substantially free of dislocation defects.
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a trench in the substrate, wherein a first surface of the trench has a first crystal plane orientation and a second surface of the trench has a second crystal plane orientation;
- and
- performing an epitaxial (epi) growth process to grow an epi film in the trench, the epi growth process incorporating an etch component;
- wherein a first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation such that the etch component prohibits growth on one of the first and second crystal plane orientations.
Dependencies are inferred from the claim text.