Quantum sensor and quantum sensing apparatus

A method comprising:

• forming a porous mask in a substrate via interference lithography, wherein the porous mask defines a three-dimensional grid pattern;
• introducing silicon carbide into the porous mask, wherein the silicon carbide is in the form of silicon carbide powder or a silicon carbide slurry;
• sintering or curing the silicon carbide at a first temperature to form a green body ceramic part;
• and
• after removal of the porous mask, sintering the green body ceramic part at a second temperature to form a three-dimensional (3D) lattice structure,
• wherein the second temperature is higher than the first temperature, and wherein the 3D lattice structure comprises a silicon carbide core and a plurality of voids.

An apparatus comprising:

• a quantum sensor comprising:
• a three-dimensional (3D) lattice structure comprising a silicon carbide core and a plurality of voids;
• and
• a plurality of color centers located within a boundary of the 3D lattice structure, wherein each of the plurality of color centers comprises a single-defect photon emitter;
• a light source to emit light at a first frequency, wherein the light source is arranged adjacent to a first side of the quantum sensor and is to emit the light at the first frequency into the quantum sensor;
• an imaging sensor array arranged adjacent to a second side of the quantum sensor;
• and
• an electromagnetic field source adjacent to the quantum sensor, wherein the electromagnetic field source is to emit a modulated electromagnetic field into the quantum sensor.

A method comprising:

• supplying power to a quantum sensing apparatus;
• exposing the quantum sensing apparatus to an external stimulus;
• measuring an output of the quantum sensing apparatus after the power is supplied to the quantum sensing apparatus;
• and
• determining from the output of the quantum sensing apparatus a strength and direction of the external stimulus;
• wherein the quantum sensing apparatus comprises:
• a quantum sensor comprising:
• a three-dimensional (3D) lattice structure comprising a silicon carbide core and a plurality of voids;
• and
• a plurality of color centers located within a boundary of the 3D lattice structure, wherein each of the plurality of color centers comprises a single-defect photon emitter;
• a light source to emit light at a first frequency, wherein the light source is arranged adjacent to a first side of the quantum sensor and is to emit the light at the first frequency into the quantum sensor;
• an imaging sensor array arranged adjacent to a second side of the quantum sensor;
• and
• an electromagnetic field source adjacent to the quantum sensor, wherein the electromagnetic field source is to emit a modulated electromagnetic field into the quantum sensor;
• wherein, when exposed to light at the first frequency and to the modulated electromagnetic field, each of the plurality of color centers emits light at a second frequency;
• and
• wherein, for respective ones of the plurality of color centers, an intensity of the light emitted at the second frequency varies based on exposure of the respective ones of the plurality of color centers to an external stimulus.