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US 6,228,694 B1Granted
Method of increasing the mobility of MOS transistors by use of localized stress regions
AssigneeIntel Corporation
InventorsBrian S. Doyle, Brian Roberds, Jin Lee
Life of this patent
Estimating the term…
Abstract
A method of modifying the mobility of a transistor. First, a substance is implanted into a substrate. The substrate is then annealed such that the implanted substance forms at least one void in the substrate. Then, a transistor is formed on the substrate.
Claims24
A method, comprising:
- providing a plurality of first regions on a substrate alternating with a plurality of second regions on the substrate such that at least one second region is disposed between at least two first regions;
- creating tensile stress in the first regions and compressive stress in the second regions by masking the second regions to prevent implanting a substance in the second regions and implanting the substance in the first regions to create voids in the first regions;
- forming channel regions of a plurality of first transistors in the plurality of first regions;
- and
- forming channel regions of a plurality of second transistors in the plurality of second regions.
2 more elements
A plurality of first transistors and second transistors created by a process comprising:
- providing a plurality of first regions on a substrate alternating with a plurality of second regions on the substrate such that at least one second region is disposed between at least two first regions;
- creating tensile stress in the first regions and compressive stress in the second regions by masking the second regions to prevent implanting a substance in the second regions and implanting the substance in the first regions to create voids in the first regions;
- forming channel regions of the plurality of first transistors in the plurality of first regions;
- and
- forming channel regions of the plurality of second transistors in the plurality of second regions.
2 more elements
A method of increasing injection of carriers in a transistor, comprising:
- creating tensile stress in a first region of a substrate and compressive stress in a second region of the substrate by masking the second regions to prevent implanting a substance in the second regions and implanting the substance in the first region to create voids in the first region;
- forming a source region of a transistor in the first region;
- forming a channel region of the transistor and a drain region of the transistor in the second region.
A transistor with increased injection of carriers, created by a process comprising:
- creating tensile stress in a first region of a substrate and compressive stress in a second region of the substrate by masking the second regions to prevent implanting a substance in the second regions and implanting the substance in the first region to create voids in the first region;
- forming a source region of the transistor in the first region;
- forming a channel region of the transistor and a drain region of the transistor in the second region.
Dependencies are inferred from the claim text.