Semiconductor device and related chip and preparation method

A power module, comprising:

• at least one semiconductor device, a diode device, and a substrate, wherein the at least one semiconductor device comprises:
• an N-type drift layer and an N-type field stop layer adjacent to the N-type drift layer, wherein a density of free electrons at the N-type field stop layer is higher than a density of free electrons at the N-type drift layer,
• the N-type field stop layer comprises first type impurity particles and second type impurity particles doped with the first type impurity particles, and a radius of the second type impurity particles is greater than a radius of the first type impurity particles,
• in the N-type field stop layer, an injection density of the first type impurity particles in a region adjacent to the N-type drift layer is higher than an injection density of the first type impurity particles in any other region, and the injection density peaks of the first type impurity particles increase sequentially along the field stop layer to the N type drift layer;
• within a first injection depth of the first type impurity particles in the N-type field stop layer, there are two or more density peaks of the first type impurity particles and within a second injection depth of the second type impurity particles in the N-type field stop layer, there are two or more density peaks of the second type impurity particles, the first injection depth being larger than the second injection depth, and
• the at least one semiconductor device and the diode device are connected in parallel, the at least one semiconductor device and the diode device are insulated from each other, and the substrate is used to package the at least one semiconductor device and the diode device.